Research of thermal processes of an IGBT module-based inverter

Authors

DOI:

https://doi.org/10.15588/1607-6761-2025-2-3

Keywords:

thermal processes, inverter, IGBT module, frequency converter

Abstract

Purpose. Study of thermal processes of an inverter based on an IGBT module for used in a frequency converter to control the operation of an asynchronous motor.

Methodology. Analytical and computational methods to analyse thermal processes of an inverter based on an IGBT module.

Findings. The study of thermal processes of the SKM200GB12T4 inverter based on the IGBT module was performed using the SemiSel program. A mathematical model of the cooling process of the SKM200GB12T4 inverter was developed. The dependence of the dynamic thermal impedance Zth(s-a) on time, which is described by an exponential function, was obtained. The value of the time constant for this dependence, which characterizes the rate of change in the cooler temperature, i.e. the quality of its operation, has been calculated. The thermal time constant τ = 1.44 s indicates the time required to reach a temperature difference of approximately 63% of its stationary value. This low value reflects the effective cooling due to the high air flow velocity (7 m/s) and air flow rate (426.43 m³/h), which is critically important for maintaining the IGBT junction temperature below 175 °C during overload.

The values of the inverter temperature maxima during overload were obtained. For an overload of 10.94 seconds, the maximum temperature for IGBT transistors is 120.85 °C, and for diodes – 123.4 °C. The case temperature Tc = 71.21 °C and the radiator temperature Ts = 63.56 °C remain the same for transistors and diodes and do not exceed the maximum operating temperature of the module due to the stability of the cooling system. However, overheating can increase with prolonged loading, resulting in the degradation of semiconductor devices.

The temperature and power variation processes at nominal load and in overload mode for one period have been studied using the SemiSel program. The temperature change graphs reflect the stability of the temperature at various points, such as the transitions of IGBT transistors and reverse diodes, due to effective thermal control. The power graph indicates cyclical changes in losses, with peaks in the phases where current and voltage are maximum. These data confirm the suitability of the module for use in control circuits.

Originality.  Based on the graphical analysis of the kinetic dependencies of temperature and inverter power, a mathematical model of the cooling process of the SKM200GB12T4 inverter was developed, that describes the dependence of the dynamic thermal impedance Zth(s-a) on time. The thermal time constant for this dependence, which characterises the rate of change of the cooler temperature, was calculated.

Practical value. The results of the study of the thermal characteristics of the SKM200GB12T4 inverter can be used to optimize the operating modes of the frequency converter for controlling the operation of an asynchronous motor.

Author Biographies

S.P. Lushchin, National University ”Zaporizhzhia Polytechnic”

Ph.D, Associate professor, Associate professor of the department of physics of the National University ”Zaporizhzhia Polytechnic”, Zaporizhzhia

D.P. Paxar, National University ”Zaporizhzhia Polytechnic”

student of the Faculty of Electrical Engineering of the National University ”Zaporizhzhia Polytechnic”, Zaporizhzhia

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Published

2025-06-14

How to Cite

Lushchin, S., & Paxar, D. (2025). Research of thermal processes of an IGBT module-based inverter . Electrical Engineering and Power Engineering, (2), 26–36. https://doi.org/10.15588/1607-6761-2025-2-3